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DUV photoresist Progress in (I) - part of the main film-forming polymer


This is the environmental protection problems faced by the resist. Negative development for the resin are: 1 (4) a vinylimidazole and styrene copolymer, poly-4-one (2 a-hydroxy isopropyl) styrene, 4-tert oxygen and carbon acyl protection of a polystyrene, etc. . In the DUV light irradiation, acid acid source, so that cross-linking resin and cross-linking system, or the resin itself electrophilic cross-linking occurs, the exposed area in the developer solubility decreased. For example: Poly 4. (2 a-hydroxy isopropyl) styrene electrophilic cross-linking reaction mechanism is as follows: H ------- (4) silicone polymer system - such resist is to study the earlier system,[link widoczny dla zalogowanych], the DUV EB light can be applied. From the patent situation, there are some new developments recently. Which is the corrosion resistance of resin matrix system are: alkali soluble silicone polymer, poly hydroxy styrene siloxane and a mixture of hydroxyl, acid decomposable groups with a silicon compound, the structure is as follows: ( 900H) x (900H) y (QH) zIII hand Z. Rl2ZlIIlf-Si (Si0 one by one one by one one by one si0 S | ()-z-} single ring or multiple aromatic ring hydroxyl and hydrocarbon bridge when the DUV illumination ring, the system of the photosensitizer (such as a diazo DNQ or a compounds) produced in the exposed areas carboxylic acid, melting into Dissolution by the resistance, the system increases contrast; or in an acid,[link widoczny dla zalogowanych], the acid groups off easily decomposed, the polymer can be dissolved in the developer. Negative resins are: poly alkyl siloxane, vinyl siloxane, three-dimensional silicon-phenylene siloxane polymer and from 2-phenyl-trimethoxy silane and a (3,4-epoxy has a alkyl) B trimethoxy silane sol-gel reaction. When the DUV light irradiation, the exposed areas crosslinked, or under the effect of acid condensation reaction leaving exposed area insoluble in the developer. siloxane first general for the chain and ladder structures, and later developed a better three-dimensional structure rigid. This three-dimensional structure of siloxane resist a good resolution, high contrast, low swelling and good anti-corrosion capacity of dry . (5) and other organic metal compounds. organic metal compounds include trimethyl germanium chloride styrene and methyl styrene copolymers, poly trialkyl germanium protected hydroxy styrene, tri-butyl tin methacrylate copolymer and so on. trialkyl germanium protection is a poly hydroxy styrene germanium reagent and the formation of reactive hydroxyl groups, is a surface imaging technique. Compared with the silicon surface imaging technology, with more likely to resist germanium solve the problem of the end of dirty. came to light, the use of germanium germanium reagent, and then carried out by plasma etching, a negative image. trimethyl germanium chloride methyl styrene and styrene system in the exposure, C_Cl bond breaks,[link widoczny dla zalogowanych], the resin between the cross-linking. non-exposed areas in the oxygen plasma etching, the available acidic solution development. tributylstannyl methacrylate copolymer and the imaging properties of the system related to the content of tin, when the mass percentage of tin content of 5% ~ 15%, the system show positive. When the mass percentage of tin content> l5%, due to the tin-based group crosslinking occurs, the negative resist system. This type of resist at the same time for DUV and EB. but the system of organic metal compounds mainly prior to 1994, few studies in recent years. DUV photoresist addition to the above-mentioned, there are some other compounds. One positive resin systems: polyimide, poly (o-trimethylsilyl 4 I. PHTHALALDEHYDE) and so on. In the DUV light irradiation, acid acid source, polymer removal under the action of acid protective group, broken chain or degradation, so that the exposure area by insoluble in alkaline solution into a soluble form of positive latent image. negative photoresist resin system are: poly (1 I. trimethylsilyl) propargyl, N. vinylcarbazole with epoxy group with fumaric acid ester copolymer, maleic anhydride and 3. trimethylsilyl-1 a propylene, methyl tert acrylic ester, copolymers of ethylene derivatives,[link widoczny dla zalogowanych], 4,4,7,7 4,7 a four or two of a silicon-methyl-2 Symplectic acetylene and so on. In the DUV light irradiation, acid source of acid, resin and crosslinking agent or crosslinking resin itself, so that exposure Area reduction in the solubility of developer; or systems containing both heat and light sources produce acid alkaline source, non-exposed areas in hot acid source of acid production occurred after removal of protective group of the reaction, the solubility of non-exposed areas increases. exposed area with light generated by the simultaneous thermal effect produced by alkali and acid, the occurrence and reaction, the nature of the resin had no effect. developer in developing a negative image. For example,[link widoczny dla zalogowanych], maleic anhydride and 3 to trimethyl Si-1 for a propylene, methyl tert acrylic resin, ethylene copolymer systems is the use of derivatives of this mechanism. This resist system to avoid the positive resist in line edge roughness issues. (To be continued ) - A Ya a sundial OO (
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