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defgf24uw
Wysłany: Czw 9:56, 30 Gru 2010
Temat postu: mbt schuhe auslaufmodelle Department of TiO3 ceram
,
mbt schuhe auslaufmodelle
Department of TiO3 ceramic PTC resistance factors
b035) Ti series PTC ceramic fired at 1250 ℃, holding 4O minutes is more appropriate. In the cooling stage, the Ti-rich phase (BaPb) Y ~ aO7 precipitation (1M0.65Pb0.as) Ti grains formed when Ba vacancy. Acceptor doped oxides of trace ions and Ba vacancies at the grain boundaries to form the first barrier layer, and then spread to the grains. Barrier can block the cooling rate of the carrier through the slower, thicker the barrier layer, the resistivity at room temperature the greater the cooling rate is very slow in the case. Much larger than the thickness of the barrier material grain size, material becomes an insulator proved by many experiments, 600 ℃ ~ 700 ℃ / h cooling rate is more appropriate. Slow diffusion barrier layer in the temperature (1】 50 ~ C) under the appropriate thermal insulation, easy control of material resistance. (BasPb0as) TiO3 PTC materials, the best firing line curve shown in Figure 4. g1; 1 爿 ■ TRANSACTIONS song when firing Yu Tian (h) according to the chemical composition of the material law of resistivity at room temperature, re-development of the following components: 1tool (Ba65Pb0.a5) TiO ~, 0.002molA12oa, 0.004mol , 0,01 molTio2, 0.003molLa2O3, 0.0002molMnO2. Firing curves in Figure 4 firing, the sample resistance under different temperature and pressure tests measured the resistivity with temperature curve shown in Figure 5. Can be seen from Figure 5. (B6.Pb03s) TJO ~ Department of PTC materials, the surface temperature T is 270X:, room temperature resistance Chui 0 = 5 ~ 8 × lo ・ Cm,
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, resistance to pressure to 240v/mm. The material can be used for self-regulating ceramic heating Hebei No. 2 22 No. 83 1994 the total body components. Home degrees (℃) This 5 Summary 'of the present study of doping oxides on the (Ba; Pb0.ss) Tio3 Department of PTC materials, the impact of room temperature resistivity and the sintering process on the material properties. The surface temperature of the material for the trial 270 ℃. Room temperature resistivity of 5 ~ 8 × 100 ・ cm, pressure resistant to 220 ~ 240v/mm. Since the temperature of the PTC ceramic heating element used in Figure 5 resistance - temperature characteristic curve Received: l9. 3 a ¨ a 234.3 (aa ¨ 5Pb ¨ 5) 'rio3 Department of PTC materials, semi-conductivity mechanism and PTC Effect of the mechanism (Ba0_65Pbna5) TiO3 PTC system is n-type semiconductor material. Doped donor La2O. And (Bao6sPb) TiOa the formation of limited solid solution. La \External electric field into the conductive carrier. The semi-conductivity mechanism described by the following formula: (aa06sPb0.) TiO3 + zLa-+ (Bal a PbLa) l a Oa + sBa \not exist in the grain sector, the semiconductor ceramic PTC effect is the average effect of a large number of grain boundaries in the (Ba0BsPbnas) 'rio boundary line of semiconductor materials, the Ba vacancies and acceptor ions to form the barrier layer surface. The barrier layer ? thickness and inversely proportional to dielectric constant. In less than ? Tc great when the barrier layer is thinner, the carrier is easy to pass through the barrier layer. and the material resistivity decreases, showing NTC effect. When the temperature is higher than When Tc,
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, ? by the Curie-Weiss law for a change. that e a currency =. T '~ Tc time, e greatly reduced and the barrier layer thickness, through the carrier is not easy. resistivity also increased. showed PTC effect. lap 5 the experimental curves also proved TxA ~ l5 series come out in Taixing dispersant one for industrial ceramics,
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